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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage VALUE 850 450 7 UNIT V V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak w ww scs .i 15 30 3 4.5 125 150 -65~150 V A .cn mi e A A A IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICER ICEV IEBO PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 5A; IB= 0.5A B BUF410 MIN 450 7 TYP. MAX UNIT V V 0.8 0.5 0.9 V V V V 0.2 1.0 0.2 1.0 1.0 mA mA mA IC= 10A; IB= 2A IC= 5A; IB= 0.5A B IC= 10A; IB= 2A Switching Times; Resistive Load ts tf Storage Time Fall Time w w w. sem isc VEB= 5V; IC= 0 VCE=VCEV; RBE= 100 VCE=VCEV; RBE= 100;TC=100 VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100 .cn i 1.1 IC= 5A;IB1= 0.5A;VCC= 50V; VBB= -5V, RBB= 1.2;L= 0.5mH Vclamp= 400V 0.8 0.05 s s isc Websitewww.iscsemi.cn |
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